Abstract
Thick GaN epitaxial layers were grown by the sublimation “sandwich method” (SSM) on SiC substrates at temperatures from 1100°C to 1250°C in ammonia flow. Metallic Ga or GaN powder was used as the vapor source. The possibility of growing of monocrystalline GaN layers with growth rates as high as 1 mm/h was demonstrated. The dependence of the growth kinetics on temperature, source to substrate distance and input ammonia flow rate was studied. Various characterization techniques show the high quality of the GaN layers.
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