High rate etching of GaAs and GaP by gas cluster ion beams

Abstract

ABSTRACTGas cluster ion beam (GCIB) techniques have recently been proposed as new processing methods. We have been investigating the characteristics of GCIB techniques through sputtering GaAs and GaP by Ar gas cluster ion beams as a function of cluster size and acceleration energy. The Ar cluster size was selected by a magnetic spectrometer, and was obtained from the mass spectra measured by a time of flight mass spectrometer. The average sputtering yields of GaAs and GaP were 0–47 and 0–66 atoms/ion for 5–30 k V, respectively. The sputtering yields of GaAs and GaP were higher than those of an Ar monomer ion.