High rate deposition of SiO 2 on large-scale glass by dc arc plasma enhanced CVD

Abstract

Preparation of SiO 2 films on large-scale glass substrates has been studied. Coatings were formed by a newly developed high-density arc plasma enhanced chemical vapor deposition system with two widely spread sheet-like plasmas generated by hollow-type dc arc plasma guns. The film structure strongly depended on the SiH 4/O 2 flow ratio, and the optimum ratio for obtaining the film of good optical properties and chemical durabilities was found to be 1 2 , based on the film composition evaluated by infrared transmission spectroscopy and X-ray photoelectron spectroscopy. The film deposited at the optimum gas condition had no SiOH or SiH groups in the film structure and showed good optical properties and chemical durability. The deposition rate increased with an increase in the SiH 4 flow rate, and finally a rate of 11.8 nm/s was achieved, while maintaining good film properties. Deposition with good thickness uniformity was also achieved by calculating the appropriate arrangement of several gas nozzles based on a cosine law distribution.