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Abstract
A high-rate a-Si:H film deposition using the new plasma–chemical gas jet method with electron beam activation has been developed. The films were characterized by ellipsometry, IR-spectrometry, and electrophysical measurements. Comparison of the film characteristics with those obtained by Hichikawa et al., J. Appl. Phys. 73, 4227 (1993), in the usual planar technology has demonstrated satisfactory film quality with a growth rate of films an order of magnitude greater than the rates in a planar reactor.
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