Abstract
A high rate anisotropic etching process, suitable for plasma etching one wafer at a time, is discussed. Results indicate that the etch rate is overridingly dependent on the concentration and is independent of the rf power used to drive the discharge. Several additives are used to control the etching process. is added to initiate etching, and is included to control the anisotropy. Large amounts of He assist photoresist preservation. Parametric studies supporting the roles of the additives have been made.
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