Abstract
To obtain a high quantum efficiency transmission-mode GaAlAs photocathode, a photocathode with a graded Al composition structure is designed, in which the Al composition of the emission layer is decreased gradually from bulk to surface, and the outermost layer is GaAs. Based on the graded Al composition structure, GaAlAs photocathodes with different thicknesses of GaAs layers are prepared. The experimental results show that the quantum efficiency of the GaAlAs photocathode in blue-green light significantly increased when the thickness of the outermost GaAs achieves a dozen nanometers. The peak quantum efficiency of a GaAlAs photocathode with a nanoscale GaAs layer could achieve 31%, which appears at 620 nm. The nanoscale surface structure has a quantum confinement effect, which is the main factor in the increased quantum efficiency of the GaAlAs photocathode.
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