Abstract
High quantum efficiency UV-enhanced (P+nn+) silicon photodiodes have been developed using ion implantation, rapid thermal processing, and a thin silicon dioxide film as an antireflection/passivation layer. The unbiased devices have internal quantum efficiency in excess of 350% at a wavelength equal to 250 nm. The devices are stable, have very low dark current at a reverse bias voltage of 1 V and high responsivity. Analysis of the dopant concentration versus junction depth using a sheet resistance technique was done in this work. PACS Nos.: 85.60Gz, 85.60Bt, 85.60DW
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