Abstract
Liquid phase epitaxial grown Cd-doped InGaAsP/InP double-heterostructure stripe lasers were found to yield very high external differential quantum efficiency, ηext ∼74% in relatively long cavity lasers compared to that of our Zn-doped ones. Since Cd was found to diffuse only slightly into the active layer, the high ηext as well as the lower threshold current in the Cd-doped lasers are attributed to lower concentration of nonradiative recombination centers. The broad area lasers have lower ηext than the respective stripe lasers. Moreover, ηext is insensitive to the heat sink temperature in the range 20–70 °C in the stripe lasers while it drops considerably in the broad area ones.
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