Abstract
A high quantum efficiency for a porous silicon light emitting diode (LED) is demonstrated under pulsed operation. The LED is fabricated from a p+nn+ structure by anodic/hydrofluoric etching followed by deposition of a transparent gold contact. The LED shows a rectifying behavior and emits orange-red light under forward bias with a spectral width significantly narrower than the corresponding photoluminescence spectrum. By calibrated measurements, we here demonstrate electroluminescence external quantum efficiencies of ∼0.2% under pulsed operation corresponding to internal quantum efficiencies of a few percent.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
