Abstract
High quality, large (25 mm in diameter) crystals of ZnSe and Zn(Se,S) were grown by low-temperature physical vapour transport method and characterized by various techniques, i.e. energy dispersive X-ray fluorescence spectrometry, double-crystal X-ray diffraction rocking curve FWHM, reflectivity measurements in the region of free exciton, electrical measurements and photoluminescence measurements for both low and high excitation densities. The measurement of the photoluminescence related to the neutral-donor-bound exciton revealed superlinear log(photoluminescence intensity) versus log(excitation intensity) dependence, which indicates stimulated emission phenomena.
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