Abstract
Broad area oxide strip lasers have been fabricated from GaInAs/GaInAsP multiquantum well laser material which has undergone various degrees of intermixing by photoabsorption induced disordering. This process provides an effective way of altering the emission wavelength of lasers fabricated from a single epitaxial wafer, and we have demonstrated blue shifts of up to 160 nm in lasing spectra. The band gap tuned lasers are also assessed in terms of threshold current density, internal quantum efficiency, and internal loss and it is shown that good device performance is maintained.
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