Abstract
Abstract This paper describes gallium arsenide varactor diodes which develop effective values of γƒc over 130 GHz and will operate in double-diode parametric amplifiers at idler frequencies up to 43 GHz. With such diodes it is possible to build wide band amplifiers which give good low noise performance without refrigeration. For example, an uncooled two-stage amplifier with a bandwidth of 500 MHz at 2G dB gain gives an overall excess noise temperature at 7.25 GHz of 85°k of which only 60°K is due to the varactor.
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