Abstract
ABSTRACTIn this paper, we report performance and reliability of CMOS devices with ultra thin (<20Å) Si3N4gate dielectric fabricated by in-situ rapid thermal CVD (RTCVD) process, and compare with control SiO2devices of identical equivalent oxide thickness (Tox,eq). Ultra thin CVD Si3N4 devices show significantly lower gate leakage current, complete suppression of boron penetration, improved MOSFET performance, and enhanced reliability against electrical stress.
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