High quality TiO2 deposited by reactive sputtering. Structural and electrical peculiarities influenced by the specific experimental conditions

Abstract

Titanium dioxide (TiO2) thin films were deposited on silicon p type (100) substrates by reactive magnetron sputtering technique at different oxygen partial pressures. The film structure was studied by X-Ray Diffraction (XRD), while the film composition was examined by Rutherford Backscattering Spectroscopy (RBS). Finally, Metal-Oxide Semiconductor (MOS) capacitors were manufactured and some important physical constants were analyzed as function of the oxygen content in the films. It was found that the films deposited at lower oxygen partial pressure exhibited better crystalline structure and higher dielectric constant.