Abstract
The analysis of processes in the p-n-junction mass production has proved that the silicon p-njunctions are the most suitable ones for constructing temperature sensors, which are able to compete with platinum thermal converters. The technology of their production is the most accurate one in comparison with other electronic components. Criteria, which the p-n-junctions must correspond to during the construction of high-stable thermal sensors, have been formulated. A synthesized physic and mathematical model makes possible to reproduce temperature characteristic of the sensor within a wide temperature range at the 0,50 C sequence exactitude following two reference points.
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