Abstract
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, β-Ga2O3 is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional β-Ga2O3 nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density β-Ga2O3 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single β-Ga2O3 nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed.
Highlights
In this article, considering the significance and benefits of nanowires, we explored the fundamental resistive switching mechanism of a single β-Ga2 O3 nanowire and discussed it in detail
Using grazing-incidence X-ray diffraction (GI-XRD) analysis using the X’Pert Pro MRD, The diffraction peaks were matched with JCPDS
It is were indicated that the prepared belongs to the hkl matched with card no sample
Summary
4.4–4.9 eV depending on its crystal structure, such as monoclinic (β-Ga2 O3 ), corundum (α-Ga2 O3 ), hexagonal (ε-Ga2 O3 ), defective spinel (γ-Ga2 O3 ), and bixbyite (δ-Ga2 O3 ) [1,2,3,4]. Low-dimensional β-Ga2 O3 nanostructures, including nanowires, nanorods, nanobelts, nanoribbons, and nanoflakes, have massive potential in various semiconductor applications that have not been explored fully [22,23] Among these structures, nanowires are considered excellent materials due to their controllability in growth, electron flow, and ease of obtaining a high-quality, as well as single-crystalline, structure, making them ideal candidates for device fabrication. Nanowires are considered excellent materials due to their controllability in growth, electron flow, and ease of obtaining a high-quality, as well as single-crystalline, structure, making them ideal candidates for device fabrication The use of such materials is determined by a number of elements from a theoretical perspective. In this article, considering the significance and benefits of nanowires, we explored the fundamental resistive switching mechanism of a single β-Ga2 O3 nanowire and discussed it in detail. The switching mechanism of 1D nanowires is statistically discussed, and the physical mechanism is illustrated in detail
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