Abstract
A silicon-on-insulator (SOI) structure was formed by implanting 150 keV O+ ions into a single-crystal n-type Si. The substrate temperature during implantation was maintained at 600 °C. Implanted samples were subsequently annealed in the ambient air at 1350 °C for 70 min using a halogen lamp oven and analyzed using the Rutherford backscattering/channeling technique, cross-sectional electron microscopy, and high-resolution electron microscopy. It is shown that the resulting dislocation density within the top Si layer (105–106/cm2) is two to three orders of magnitude lower than the dislocation density previously reported for the SOI structures implanted under similar conditions and subsequently annealed in an inert gas ambient or under vacuum.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
