Abstract
High quality Si-doped MBE. GaAs layers with high reproducibility have been grown by minimizing the incorporation of impurity species. The electrical and optical properties, and the doping characteristics of the Si-doped layers have been studied, and compared with those of Sn-doped layers. Hall mobility has indicated a low level of compensation in both the Si- and Sn-doped layers. The photoluminescence intensity of the Si-doped layers has been as high as that of the Sn-doped layers. Si-doped layers have shown more abrupt doping profiles than those of the Sn-doped layers, even when the surface segregation effect of the Sn-doped layers has not been observed. The difference in the doping profiles between the Si- and Sn-doped layers is discussed.
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