Abstract
We fabricated a high quality Y123 single crystal for electronic device applications by the modified pulling method. A high quality 13 mm-squared single crystal was obtained along 〈0 0 1〉 pulling. An extremely high quality 8 mm squared single crystal was obtained along 〈1 0 0〉 pulling. The value of the full width at half maximum of the X-ray rocking curve of the (0 0 1) face pulled along 〈1 0 0〉 direction was about 0.09°. This value was about a half of that grown along 〈0 0 1〉 direction. Additionally, we compared the etch pit density of the 〈0 0 1〉 pulled single crystal with that of a liquid phase epitaxy (LPE) film. The etch pit density of the LPE films is about 100 times higher than that of the pulled crystal. The substrates made of the pulled crystals are applicable especially to single flux quantum devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
