Abstract
The porous anode alumina (PAA) films on silicon substrate with good physicochemical properties have hopeful for the nano-scale devices. The various factors which influence the preparation of high performance PAA film based on silicon were systematically studied, the DC magnetron sputtering technology was used to deposit aluminum and the two-step anodic oxidation method to growth PAA membrane. The results demonstrated that about 2 μm aluminum film deposited on the p-type silicon substrate, in advance deposited 50 nm Ti film on the Si substrate, can get high quality Si-based PAA membrane with good adhesivity, stable structure and consistent pore shape and diameter.
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