Abstract
Aluminum nitride (AlN) easily reacts with water when polished using an aqueous slurry. Moreover, grains tend to easily shed off of the AlN surface since it is a sintered material. Thus, obtaining a smooth AlN surface by traditional mechanical polishing techniques is challenging. Herein, we demonstrate plasma-assisted polishing (PAP) that relies on surface modification by plasma irradiation and removal of the modified layer by ultra-low pressure. After CF4 plasma irradiation, AlN was modified to AlF3, and its modified layer was removed using a diamond abrasive. The material removal rate increased twice by CF4 plasma irradiation compared with that without it.
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