High quality perovskite thin films synthesized by low-temperature supercritical carbon dioxide annealing method

Abstract

Thermal annealing is a conventional method used to eliminate residual solvents in perovskite films, reducing internal and interfacial defects. However, due to the high saturation vapor pressure of the residual solvent dimethyl sulfoxide, it is difficult to quickly remove the residual solvent at low temperatures. In this paper, the high permeability and diffusion of supercritical CO2 (ScCO2) were used to quickly remove the residual solvent of film at low temperatures. The effects of ScCO2 annealing on the surface morphology, residual solvents, internal and interfacial defects of perovskite thin films were investigated. The experimental results indicate that ScCO2 annealing significantly improves the removal efficiency of residual solvents compared to low-temperature annealing, effectively minimizing internal and interfacial defects. Additionally, the interaction energy of CO2 with the perovskite crystal plane reduces the surface energy of the crystal, resulting in a significant increase in the average grain size of the crystal by about 91.2%. Notably, the average crystal size of the film prepared by chlorobenzene as an antisolvent increased from 209.35 nm to 704.57 nm. The high penetration of ScCO2 also promoted uniform crystal growth, thereby reducing crystal structure deformation and defects. The carrier lifetime of perovskite thin films after ScCO2 annealing increased by over 58.8% on average.