Abstract
A modification of the methoxyethanol-based sol–gel route used for depositing high-quality PbZr 0.52Ti 0.48O 3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm 2 and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.
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