Abstract
A device-quality p-type microcrystalline silicon (µc-Si)film was prepared using a new solid phase crystallization (SPC) method from the p-type amorphous silicon (a-Si:H) deposited by plasma-CVD. The obtained properties of high conductivity (σd=2×103 (Ω·cm)-1) and a high optical transmittance in the range of 2.0 eV∼3.0 eV are better as a window material for a-Si solar cells than those of conventional p-type µc-Si:H and a-SiC:H.
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