High Quality P-Type A-SiC Film Doped with B(Ch3)3 and its Application to A-Si Solar Cells

Abstract

High-quality p-type a-SiC films were prepared using a new doping gas, B(CH 3 ) 3 , instead of B 2 H 6 . a-SiC films deposited with B(CH 3 ) 1 show high photoluminescence intensity and low defect density. Doping efficiency was also improved by usiyg B(CH 3 ) 3 . A module efficiency of more than 9% was achieved for a 100 cm 2 a-Si solar cell whose p-layer was doped with B(CH 3 ) 3 . A new plasma CVD method, called controlled plasma magnetron (CPM) method was developed to realize high electron-density plasma with low damage to substrate. High conductive p-type μc(microcrystalline)- SiC films were prepared by CPM method with B(CH 3 ) 3 . CPM method was found to be suitable not only for preparation of μc films but for high-speed deposition.