Abstract
A novel technique of manufacturing high electric performance p–n junctions has been investigated in this paper. In the first step, amorphous silicon films (a-Si) with gradually changed thickness of 20, 36, 81.5 and 106nm have been deposited on low and high resistivity Si wafers by the LPCVD method. In the second step, the low energetic boron ions (11B+,10keV, 5×1015cm−2) were implanted. The quality of the fabricated junctions has been investigated.
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