Abstract
The antimony-doped (0–4 at %) tin dioxide thin films are deposited by spray pyrolysis method with a less volume of solution. The x-ray diffraction, atomic force microscopy, Raman spectroscopy, optical transmittances and electrical conductivity measurements are taken at room temperature. The structural, morphological, optical and electronic characteristics are determined using these measurements. The effect of antimony doping ratio on the optoelectronic properties of the samples is analyzed via figure of merit. In this study, the obtained best values for highest optical transmittance is 87.46 % at 650 nm wavelength, the lowest resistivity is 1.48 × 10–3 Ωcm and the highest figure of merit is 7.31 × 10–3 Ω−1 for 2 at % antimony-doped tin dioxide thin film.
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