Abstract
High quality Nb/Al–AlOx–Al/Nb Josephson tunnel junctions have been fabricated using electron beam evaporation as the deposition technique. At 4.2 K, value of V m, the quality factor, exceeding 60 mV has been achieved; this value of V m is the highest reported for electron beam evaporated Nb–AlOx–Nb junctions and compares well with the best Nb–AlOx–Nb junctions fabricated by the sputtering technique. We discuss the fabrication process used and present a detailed characterization of a typical Josephson junction.
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