Abstract
The heteroepitaxy efforts to grow semipolar and nonpolar GaN on foreign substrates of the past 20 years are reviewed and summarized. With the demonstration of three representative semipolar GaN grown on sapphire, the capability to produce semipolar GaN with any orientation on sapphire is exhibited. Also, a unique growth technology called facet‐engineered orientation‐controlling growth to eliminate the stacking faults (SFs) in semipolar GaN is developed and SF‐free (201) GaN grown on sapphire is presented, demonstrating the capability of producing device‐quality, large‐area semipolar GaN. InGaN green light‐emitting diodes (LEDs) grown on the SF‐free semipolar (201) GaN/sapphire templates are performed with much higher external quantum efficiency in comparison with the typical semipolar/nonpolar LEDs heteroepitaxially grown on foreign substrates reported before.
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