Abstract
Liquid-phase-epitaxial growth of InGaAsP/InP DH laser wafers under a PH 3 partial pressure has been carried out. The addition of PH 3 effectively prevents thermal degradation of the InP substrates. To investigate the PH 3 influence on the InGaAs/InP DH laser wafer quality, the active layer photoluminescence and room-temperature threshold current for laser diodes fabricated were measured for each wafer. It was found that the PL intensities for wafers grown under a PH 3 ambient are relatively stronger than the intensities for wafers grown by the InP covering method. The results also show that laser diodes with lower threshold current are obtained reproducibly from wafers grown under a PH 3 ambient.
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