High quality low thermal budget low cost SiO2 film fabricated by O2 plasma immersion ion implantation

Abstract

O2 plasma immersion ion implantation technique has been developed to form high quality low thermal budget low cost SiO2 films with unique feature of selective oxidation for three-dimensional or nonplanar structures of ultra-large-scale integration applications. The formed SiO2 material was extensively characterized and investigated. The SiO2 films have demonstrated good chemical stoichiometric composition, and good electrical properties including higher bulk resistivity ρ, higher breakdown charge QBD, comparable dielectric constant k and interface state density Dit. The formed SiO2 material has demonstrated better qualities than those of tetraethyl orthosilicate SiO2 film and comparable to those of thermal grown SiO2 film.