Abstract
In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH/sub 3/ with additional N/sub 2/O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N/sub 2/O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
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