Abstract
Highly-quality InN films were prepared on Si (100) substrates using radio frequency plasma-assist metal-organic molecular beam epitaxy (RF-MOMBE) system. Ga-doped ZnO (GZO) films were used buffer layer for InN films growth. The InN films has been characterized in detail using X-ray diffraction (XRD), High resolution transmission electron microscopy (TEM), and photoluminescence (PL) measurements. XRD pattern shows InN films has wurtzite structure with preferential (0002) orientation. TEM images exhibit the InN/GZO were growth by two-dimensional mode and thickness about 1 μm. Specially, InN was high growth rate ∼ 33 nm/min disposition on substrates by our system. Optical characterization by photoluminescence confirms that the band gap of polycrystalline wurtzite InN is 0.79 ± 0.05 eV. The polarity dependence of the film crystalline is discussed in terms of the reactivity at the InN/GZO interface. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.
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