High quality InAsSb grown on InP substrates using AlSb∕AlAsSb buffer layers

Abstract

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb∕AlAsSb structure as the buffer layer. A 1000Å InAsSb layer grown on top of 1μm AlSb∕AlAsSb buffer layer showed a room temperature electron mobility of ∼12000cm2∕Vs. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb∕AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1Å family of compound semiconductor alloys.