Abstract
Abstract We present the effect of interface quality on the performance of InAsSb based hetero n-i -p middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap p- and n-type layers and inserting a thin layer between the two doped layers and the absorbing InAsSb region, the interface quality can be improved. We also employed proper fabrication processes in device fabrication to improve surface quality. It is found that the improved interface and surface quality can reduce the noise current and enhance detection performance. A detectivity of ∼1.5 × 10 9 cmHz 1/2 W −1 can be achieved at room temperature, and it can be increased to ∼4.0 × 10 9 cmHz 1/2 W −1 at 250 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
