Abstract
Abstract Homoepitaxial diamond films grown in the condition of CH 4 /H 2 ratio lower than 0.15% in a microwave-assisted plasma chemical vapor deposition system had excellent electrical and optical properties without any unepitaxial crystallites (UCs). Under such a low CH 4 concentration condition, however, the growth rate becomes too slow to obtain a useful thickness. In order to overcome this problem, we attempted a two-step growth method. In the first step the substrate surface was treated by homoepitaxial growth of diamond in the presence of 0.05% CH 4 in H 2 ; in the second step the CH 4 concentration was increased. By considering the origin of UCs with cross-sectional transmission electron microscope studies, it was found that this method is based on surface improvement of the initial substrate by means of ultra-low CH 4 concentration growth. This method was quite useful for obtaining high quality films, with high growth rate and reproducibility.
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