Abstract
In this paper, the synthesis of high quality graphene on single-crystal Mo(110) films by chemical vapor deposition (CVD) of methane was reported for the first time. X-ray diffraction proves that carbon species had dissolved into the metal. The micro-Raman spectroscopy indicates that the thickness of Mo films, cooling rate and growing time play significant roles in the quality of as-grown graphene films. By optimizing the growth time (15min) and cooling rate (10°C/s), we achieved high quality graphene films with the small ratio IG/I2D≈0.26 and the FWHM(2D)≈30.4cm−1 on 200nm-thick Mo films. Our experiments also suggest that graphene growth on Mo is a dissolution and segregation process as Ni.
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