High-quality GaN grown by reactive sputtering

Abstract

Gallium nitride films were grown by reactive rf magnetron sputtering on sapphire substrates. Crystalline (112̄0) GaN films were obtained on (011̄2) sapphire at substrate temperatures between 640 and 680°C. High N 2 partial pressures are required to crystallize the GaN films. Nitrogen incorporation and crystal quality of GaN films are examined as a function of substrate temperature and nitrogen partial pressure. Band gaps of 3.4 eV, and photoluminescence peaks as narrow as 11 meV are reported for sputtered GaN films.