Abstract
High quality GaAs quantum well lasers grown on (100) and 3°-off (100)InP substrates by organometallic chemical vapor deposition were investigated for the first time. 50-μm-wide broad-area gain-guided lasers were fabricated using preferential proton implantation. Low threshold densities, 800 and 1080 A/cm2, were obtained at room temperature for lasers with 1.25-mm-long cavities grown on 3°-off (100) and (100) oriented InP substrates, respectively. High quantum efficiency of 36% and nearly single longitudinal mode emission were also achieved from these lasers.
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