High quality GaAs on Si using Si 0.04Ge 0.96/Ge buffer layers

Abstract

High-quality epitaxial growth of GaAs on Si has been achieved using Si 0.04Ge 0.96/Ge buffer layers. GaAs layers, approximately 1.3 μm thick, have been grown on Si using interfaces of Ge/Si 0.04Ge 0.96 layers to confine the majority of misfit dislocations that are generated by the 4% lattice mismatch between Ge and Si. The GaAs layers, grown by organometallic vapor phase epitaxy (OMVPE), have background carrier concentrations of ∼2×10 15 cm -3. Transmission electron microscopy (TEM) indicates dislocation densities as low as 10 7 cm -2 in the GaAs layers. A photoluminescence-decay measurement on an AlGaAs/GaAs double heterojunction (DH), grown on a (100)-oriented Si substrate and the Si 0.04Ge 0.96/Ge buffers, yields a minority-carrier hole lifetime of ∼2.5 ns which is state-of-the-art for heteroepitaxial GaAs on Si. This value represents a significant development for a novel approach in the heteroepitaxy of GaAs on Si.