Abstract

High structural and high optoelectronic quality In/sub 0.65/Ga/sub 0.35/As layers have been grown on InP substrates using the paramorphic approach. Full relaxation is achieved by growing the In/sub 0.65/Ga/sub 0.35/As layers lattice matched to an InAs/sub 0.25/P/sub 0.75/ seed membrane of predetermined lattice parameter. The InAs/sub 0.25/P/sub 0.75/ seed membrane, originally grown pseudomorphically strained on the InP substrate coated with a sacrificial layer, is separated by chemical etching from its original substrate and subsequently deposited on the bottom substrate after being elastically relaxed.

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