High quality fullerene film based on electrophoresis deposition for RRAM device application

Abstract

Abstract Even though [60]fullerene has excellent electrochemical stability and strong electron affinity, it is barely made into dense-packed film through electrophoresis method in electronic devices. But with the help of the long hydrophobic arms of tetra-n-octyl ammonium bromide in toluene solution, electrophoresis deposition was successfully used as an easy way to fabricate high quality [60]fullerene film on ITO glass substrate. When the composition and thickness of the film were confirmed by IR, XPS and SEM, the resulted film was used as the middle functional layer of RRAM device. After the IV spectra test of memory devices with different thickness of [60]fullerene layer, it was found that the memory character changed from Flash to WORM when the film thickness evolved from 200 nm to 400 nm. This is the first example to study memory performance of uniform C60 film manufactured by the electrophoresis deposition.