High Quality Factor PECVD Si 3 N4 Ring Resonators Compatible with CMOS Process

Abstract

We demonstrate high-confinement Si 3 N 4 resonators with intrinsic quality factor more than 1 million using standard PECVD process. We show that by addressing scattering, the loss at 1.6 µm can be as low as 0.4 dB/cm. © 2019 The Author(s)