Abstract
Pulsed chemical vapor deposition was used to prepare epitaxial ruthenium dioxide (RuO2) film on rutile TiO2 (011) at low temperature 280 °C. Reciprocal space mapping by high-resolution X-ray diffraction was used to examine the quality of epitaxy, which demonstrated a high quality epitaxy of the deposited RuO2 film. The results also showed that the RuO2 lattice was fully strained by the substrate in the lateral directions and, therefore, distorted from a tetragonal to a monoclinic structure.
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