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Abstract
We have studied the epitaxial Si growth on 4-inch-(001) Si wafers by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) using a porous-carbon electrode. Defect-free growth of epitaxial Si is confirmed in the temperature range 470–570 °C by transmission electron microscopy. High minority carrier generation lifetime (2.0 ms) is observed in the Si film grown at 570 °C with a rate of 0.35 μm/min. In situ H 2 AP-plasma cleaning of the substrate surface is effective for eliminating O and C concentration peaks at the film/substrate interface. Effects of plasma heating and ion bombardment of the growing-film surface have been discussed.
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