Abstract

AbstractHighly oriented strontium titanate (STO) thin films were successfully deposited on sapphire substrates using a sol-gel method. Sintering temperature of 1400°C and the use of c-cut sapphire for the substrates are the keys to obtain highly oriented thin films. The sample obtained on c-cut sapphire with a sintering temperature of 1400°C showed quite high (111)-orientation and a narrow full width half maximum (FWHM) value of 0.265°, which indicates a high quality deposition of the STO thin films.We believe this high quality STO deposition technique will bring a new scope of oxide material applications for future electronic devices.

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