High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance

Abstract

The surface characteristics of ZnO were synthetically optimized by a self-designed simultaneous etching and W-doping hydrothermal method utilizing as-prepared ZnO nanorod (NR) array films as the template. Benefiting from the etching and regrowth process and the different structural stabilities of the various faces of ZnO NRs, the uniquely etched and W-doped ZnO (EWZ) nanotube (NT) array films with larger surface area, more active sites and better energy band structure were used to improve the photoelectrochemical (PEC) performance and the loading quality of CdS quantum dots (QDs). On the basis of their better surface characteristics, the CdS QDs were uniformly loaded on EWZ NT array film with a good coverage ratio and interface connection; this effectively improved the light-harvesting ability, charge transportation and separation as well as charge injection efficiency during the PEC reaction. Therefore, all the CdS QD-sensitized EWZ NT array films exhibited significantly enhanced PEC performance. The CdS/EWZ-7 composite films exhibited the optimal photocurrent density with a value of 12 mA⋅cm−2, 2.5 times higher than that of conventional CdS/ZnO-7 composite films under the same sensitization times with CdS QDs. The corresponding etching and optimizing mechanisms were also discussed.