Abstract
Perovskite ferroelectric BaTiO3 material showed promising application in the photovoltaic field due to its positive polarization enhanced open voltage with ferroelectric modulation. Achieving perfect interfaces between the multi-layers based on BTO film was still unresolved. Therefore, we developed the bottom buffer layers SrTiO3/Ti[Formula: see text]O3 films deposited on GaAs for reducing the lattice mismatch between the epitaxial oxide (BTO) GaAs via PLD system. The out-of-plane epitaxial relationship of this heterostructure was [110]BaTiO3//[110]SrTiO3//[010]Ti[Formula: see text]O3//[001]GaAs and the in-plane epitaxial relationship was determined to be [110]BaTiO3//[110]SrTiO3//[100]Ti[Formula: see text]O3//[110]GaAs from RHEED and XRD results. In addition, we found that the inter-diffusions of Ga and As atoms from GaAs substrate to oxides films were prevented greatly by the SrTiO3/Ti[Formula: see text]O3 passivation layer. Using the Gibbs free energies of formations equations, we explained that the Ga atoms couldn’t diffuse through Ti-oxides at Ti[Formula: see text]O3/GaAs interface. Our work provided an effective measurement to develop the BTO application in the photovoltaic field.
Published Version
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