High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector

Abstract

Low-temperature (LT-) AlN interlayer reduces tensile stress during growth of AlxGa1−xN, while simultaneously acts as the dislocation filter, especially for dislocations of which Burger’s vector contains [0001] components. UV photodetectors using thus-grown high quality AlxGa1−xN layers were fabricated. The dark current bellow 50 fA at 10 V bias for 10 μm strip allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm2 have been achieved.