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Abstract
The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has been investigated. It is found that semipolar (10$$\bar {1}$$1) layers are formed in the AlN film with long preflow times. It is shown that the AlN nucleation can be controlled by choosing an optimal preflow time, which provides a desired film quality. At the optimum preflow time, the FWHM of the rocking curve for the 0002 reflection amounts to 0.59°.
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